PARAMETRIC OPTIMIZATION OF HIGH-SPEED MACHINING OF SINGLE CRYSTAL SILICON WITH CEMENTED CARBIDE TOOLS

Abstract

Single Crystal Silicon is the principal component for computer chips and photovoltaic cells. In this research, we take a look into optimizing the machining process of single-crystal silicon, a brittle material using high-speed machining. High-speed machining is chosen since it offers clear advantages over other methods of machining brittle materials e.g. turning and grinding. Machining was done at a range of 10,000 – 23,000 rpm and cemented carbide tools were used. The experiment and the analysis are done using RSM and MATLAB. The goal for this research is to perform ductile mode machining of single-crystal silicon by controlling the three parameters, spindle speed, feed rate and depth of cut. The machined surface was analyzed using both contact(surftest) and noncontact (SEM, Optical Microscope). Our findings suggest that better surface finishes (0.6-.08 μm) can be obtained at high spindle speeds (23,000 rpm), low depth of cut (10μm) and low feed rates (10-15 mm/min). The results from the optimization analysis suggest that lower feed rates (5-12) mm/min can provide an even better surface finish. The optimization of the process was also done using the principles of genetic algorithm. Both of the processes return very similar results.