Simulation and Characterization of Silicon-On- Insulator (SOI) MOSFET

Raisa, Farah; Mansur, Anika Bintey; Ahmed, Tasmia

Simulation and Characterization of Silicon-On- Insulator (SOI) MOSFET

Date

2013-12

Authors

Raisa, Farah

Mansur, Anika Bintey

Ahmed, Tasmia

Publisher

Department of Electrical, Electronic & Communication Engineering, Military Institute of Science and Technology (MIST)

Abstract

During micro-electronic evolution, MOS Technology on massive substrate played a critical task. The regular reduction of transistors sizes leads us today’s nanoscale devices. According to the ITRS roadmap, the high performance device should have a much reduced gate length in the coming years. With this reduction, some parasitic physical effects became mostly amplified, leading to the end of MOSFETs technology on massive substrate. Bulk silicon CMOS processes are reaching their limit in device miniaturization and fabrication, new technologies, such as SOI technology gives a good alternative to that miniaturization. SOI technology allows the reduction of short channel effects that appear in nanoscale devices and also allows micro-electronic evolution to continue. In this paper, we present the simulation of SOI MOSFET structure obtained using SILVACO TCAD. We also exhibit some insights on the influence of some device parameters such as oxide length, doping, channel length etc on the drain current of SOI MOSFET.

Description

First of all, we would like to thank The Almighty Allah for the accomplishment of our research work. We would like to acknowledge and proclaim out gratitude to our thesis supervisor, Dr. Md. Kawsar Alam, Assistant Professor, Department of EEE, BUET, for his valuable guidance and advice. He inspired us greatly to work in the difficult field of high frequency analog domain. He was always spontaneous to provide a helping hand whenever we were in a spot of bother. His encouragement, guidance and support from the initial to the final level enabled us to develop an understanding of the subject. Besides, we would like to thank the faculty members of the Department of Electrical Electronic and Communication Engineering, Military Institute of Science and Technology for providing us with all kinds of support. We are indebted to the authority of Military Institute of Science and Technology for providing us necessary funding and good environment and facilities to complete this thesis paper. Lastly we would like to thank every single individual who directly and indirectly helped us to accomplish our thesis by providing advice, care, attention and all kinds support.