Browsing Department of Electrical, Electronic and Communication Engineering (EECE) by Subject "VOLTAGE, CURRENT GAIN, InGaAs, HETEROJUNCTION, BIPOLAR, TRANSISTOR"

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Browsing Department of Electrical, Electronic and Communication Engineering (EECE) by Subject "VOLTAGE, CURRENT GAIN, InGaAs, HETEROJUNCTION, BIPOLAR, TRANSISTOR"

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  • The Early Voltage and Current Gain of InGaAs Double Heterojunction Bipolar Transistor 
    SANBIR HASAN MAJUMDER, MAJOR MUHAMMAD; CHOWDHURY, JOAIRIA (Department of Electrical, Electronics and Communication Engineering, MILITARY INSTITUTE OF SCIENCE AND TECHNOLOGY, 2013-12)
    Early effect is the variation in the width of the base in a bipolar junction transistor (BJT) due to a variation in the applied base-to-collector voltage, named after its discoverer James M. Early. An increase in the ...

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