Abstract:
A mathematical model is proposed to determine the photoelastic constants in arbitrary crystal orientation of Zincblende crystal
structure. Tensor rotation technique is applied using Euler’s rotation theorem to develop the model. The model is applicable to
evaluate photoelastic constants in terms of P11-P12 and P44 in any crystal plane by controlling the rotation angle using the model.
P11-P12 and P44 are calculated for Silicon crystal and found that the values of these constants are strongly dependent on crystal
orientations. The outcome of this research enables us to evaluate quantitative amount of strain in polycrystalline silicon material
(solar cell material) using Scanning Infrared Polariscope.
